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产品信息
TLP785(GB-TP6 F
TLP785(GB-TP6 F
TLP785(GB-TP6 F
TLP785(GB-TP6 F
The TOSHIBA TLP785 consists of a silicone phototransistor optically
coupled to a gallium arsenide (GaAs) infrared emitting diode in a four
lead plastic DIP (DIP4) with having high isolation voltage
(AC: 5kVRMS (min)).
TLP785F is a lead forming type for the long creepage surface mounting
of TLP785.
• TLP785: 7.62mm pitch type DIP4
• TLP785F: 10.16mm pitch type DIP4
• Collector-emitter voltage: 80V (min.)
• Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
• Isolation voltage: 5000Vrms (min.)
• UL approved: UL1577, file No. E67349
• BSI under application: BS EN60065:2002
BS EN60950-1:2006
• SEMKO under application:EN60065:2002
EN60950-1:2001, EN60335-1:2002
• Option(D4)type
VDE approved: DIN EN60747-5-2
(Note): When an EN60747-5-2 approved type is needed,
Please designate “Option (D4)”
.
• Construction mechanical rating
7.62mm Pitch
Standard Type
10.16mm Pitch
TLPxxxF Type
Creepage distance 7.0mm(min) 8.0mm(min)
Clearance 7.0mm(min) 8.0mm(min)
Insulation thickness 0.4mm(min) 0.4mm(min)
Inner creepage distance 4.0mm(min) 4.0mm(min)